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- W793821707 abstract "Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices." @default.
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- W793821707 date "1994-12-01" @default.
- W793821707 modified "2023-09-23" @default.
- W793821707 title "Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si" @default.
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