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• W800326311 abstract "The effects of high field stress on interface trap densities (Du) in MOS transistors are compared using three methods: charge-pumping, subthreshold swing and 1// noise. The experimental MOS devices subjected to high field stress originated from two wafer lots processed with different concentrations of copper in the buffered oxide etchant. For the charge-pumping and subthreshold methods, no dependency is found on stress current polarity, wafer lot or transistor type (nor p-channel). These two methods yield similar Du values. For the 1// noise method, no dependency is found on current polarity or wafer lot. However, the noise in the n-channel devices increases by several orders of magnitude as compared to the p-channel devices. A large discrepancy is found between Du calculated from 1// noise when compared to charge-pumping/subthreshold swing results for nchannel transistors For p-channel transistors, the 1// Du results are in much better agreement with the results of the other two methods." @default.
• W800326311 created "2016-06-24" @default.
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• W800326311 date "1992-01-01" @default.
• W800326311 modified "2023-09-22" @default.
• W800326311 title "Comparison of interface trap measurements in high field stressed MOS transistors" @default.
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