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- W802408933 abstract "The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current() of and open-circuit voltage() of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and , respectively. Based on the results of QE and , the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer." @default.
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- W802408933 date "1998-01-01" @default.
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- W802408933 title "Photoelectric Properties of PbTe/CuPc Bilayer Thin Films" @default.
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