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- W805150726 abstract "The prediction of the atomic geometries of overlayers for compound semiconductors is a topic of considerable current interest, especially with regard to the mechanisms of Schottky barrier formation and the growth (e.g., by molecular-beam epitaxy) of multilayer heterojunction systems [50.1]. Moreover, such geometries are now being determined experimentally, for example by elastic low-energy electron diffraction (ELEED) intensity analyses [50.2, 3]. Thus, an opportunity exists to develop and test predictive models of the geometrical and electronic structure of ordered overlayers on semiconductor surfaces. In this contribution we present a tight-binding calculation of the atomic geometries and surface-state eigenvalue spectra of p(l × 1) overlayers of Sb on the (110) surfaces of III-V semiconductors which predicts accurately the measured structures and surface-state spectra of these surfaces. The particular systems which we examined are ordered (l × l) saturated monolayers of Sb on the (110) surfaces of GaP, GaAs, GaSb, InP, InAs and InSb. A schematic diagram of the experimental surface atomic geometry is given in Fig.50.1.KeywordsEigenvalue SpectrumOverlayer SystemSaturated MonolayerSurface Brillouin ZoneAtomic GeometryThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves." @default.
- W805150726 created "2016-06-24" @default.
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- W805150726 date "1985-01-01" @default.
- W805150726 modified "2023-09-27" @default.
- W805150726 title "Atomic and Electronic Structure of p (1 × 1) Overlayers of Sb on the (110) Surfaces of III-V Semiconductors" @default.
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- W805150726 doi "https://doi.org/10.1007/978-3-642-82493-7_51" @default.
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