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• W808390786 startingPage "369" @default.
• W808390786 abstract "In this chapter, we critically review recent progress in the understanding and control of intrinsic point defects, and hydrogen and transition metal impurities in monocrystalline silicon carbide. In particular, the 4H polytype is addressed which currently attracts large technological interest. The carbon vacancy (VC) is shown to be the most abundant electrically active defect in high-purity n-type 4H epitaxial layers, and it exhibits a formation energy of ~ 5.0 eV with a rather high entropy factor (~(5–6)k). Further, VC is a charge carrier lifetime controlling defect and displays negative-U character in its negative charge states. The prominent and so-called Z1/2 and EH7 deep levels in 4H–SiC are now unambiguously identified as different charge state transitions of VC. In contrast to VC, the silicon vacancy (VSi) exhibits a low abundance. VSi has a high electron spin ground state and is currently explored as a defect with long spin coherence time enabling long-lived qubits at room temperature. Experimental spectroscopic data for interstitials and antisite defects in SiC are scarce in the literature and our understanding relies mainly on results from ab initio modeling. Hydrogen is a prevalent residual impurity in p-type SiC and interacts strongly with acceptor dopants like Al and B leading to passivation of their electrical activity. Transition metal impurities in SiC receive an emerging interest and they are found to diffuse at high temperatures (≥ 1500 °C) and also to form stable complexes with intrinsic defects. Finally, some suggestions for future research tasks are given." @default.
• W808390786 created "2016-06-24" @default.
• W808390786 creator A5024610456 @default.
• W808390786 creator A5074917182 @default.
• W808390786 date "2015-01-01" @default.
• W808390786 modified "2023-10-16" @default.
• W808390786 title "Point Defects in Silicon Carbide" @default.
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• W808390786 doi "https://doi.org/10.1016/bs.semsem.2015.02.001" @default.
• W808390786 hasPublicationYear "2015" @default.
• W808390786 type Work @default.
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