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• W814460038 abstract "Abstract We report the electrical conductance and magnetoconductance (MC) effect in n-type porous silicon (PS) layers. The samples show significant positive MC at room temperature and the presence of a memory effect when a perpendicular low static magnetic field is applied (first scan: 0 T → 0.8 T, second scan: 0.8 T → 0 T). We modeled the experimental results in terms of quasi-one-dimensional (quasi-1D) weak localization (WL) theory. From the fit to experimental data we determined some parameters such as the phase coherence length L ϕ , the mean free path l e and the Fermi wave vector k F for different porosities. These results seem to indicate that WL effect at room temperature predominate on these inhomogeneous systems." @default.
• W814460038 created "2016-06-24" @default.
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• W814460038 date "2015-09-01" @default.
• W814460038 modified "2023-09-27" @default.
• W814460038 title "Electrical conductance and magnetoconductance effect on n-type porous silicon: Contribution of weak localization correction" @default.
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• W814460038 doi "https://doi.org/10.1016/j.spmi.2015.06.042" @default.
• W814460038 hasPublicationYear "2015" @default.
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