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• W816283023 abstract "We study the effect of ultra-thin oxide (SiOx) layers inserted at the interfaces of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (VOC). The SiOx layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (H2O2) and nitric acid (HNO3). We confirm the prevention of the undesirable epitaxial growth of Si layers during the deposition of a-Si films by the insertion of the ultra-thin SiOx layers. The formation of the SiOx layers by H2O2 leads to better effective minority carrier lifetime (τeff) and VOC than the case of using HNO3. c-Si with the ultra-thin SiOx layers formed by H2O2 dipping, prior to deposition of a-Si passivation layers, can have high implied VOC of up to ∼0.714 V." @default.
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• W816283023 date "2015-10-01" @default.
• W816283023 modified "2023-10-18" @default.
• W816283023 title "Application of crystalline silicon surface oxidation to silicon heterojunction solar cells" @default.
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• W816283023 doi "https://doi.org/10.1016/j.cap.2015.07.004" @default.
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