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- W817636957 abstract "Shallow <TEX>$p^{＋}$</TEX> n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to <TEX>$850^{circ}C$</TEX> and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed transient enhanced deactivation, an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X<TEX>$/^{circ}C$</TEX>. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV." @default.
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- W817636957 date "2003-06-01" @default.
- W817636957 modified "2023-09-26" @default.
- W817636957 title "Deactivation Kinetics in Heavily Boron Doped Silicon Using Ultra Low Energy Ion Implantation" @default.
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- W817636957 doi "https://doi.org/10.3740/mrsk.2003.13.6.398" @default.
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