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- W817893293 abstract "Heteroepitaxial InP/GaAs layers were grown using the selective liquid phase epitaxy (SLPE) technique. It was observed that the optimum LPE conditions were growth temperature, supercooling, and /min cooling rate. Maximum expitaxial layer overgrowth (ELO) of 110-160 was obtained when the seed was aligned along (112) orientation. Initial melt-back of the substrate was observed but limited to the seed region so that flat In-Ga-As-P layers were grpwn throughout the GaAs substrates. The InP/GaAs heteroepitaxial structure could be obtained by growing an additional InP layer on top of the In-Ga-As-P layer." @default.
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- W817893293 date "1994-01-01" @default.
- W817893293 modified "2023-09-26" @default.
- W817893293 title "Growth of Heteroepitaxial InP/GaAs by selective liquid phase epitaxy" @default.
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