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- W824849969 abstract "Hot carrier degradation and roll off characteristics of threshold voltage (<TEX>$V_{t1}$</TEX>) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control <TEX>$V_{t1}$</TEX> roll off down to the <TEX>$10%$</TEX> gate length margin. It was seen that the relationship between <TEX>$V_{t1}$</TEX> roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage (<TEX>$V_{t1}$</TEX>) depends on drain current, and both <TEX>$I_{t2}$</TEX> and snapback holding voltage (<TEX>$V_{sp}$</TEX>) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the <TEX>$V_{t1}$</TEX> roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic." @default.
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- W824849969 date "2006-02-01" @default.
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- W824849969 title "Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology" @default.
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- W824849969 doi "https://doi.org/10.4313/teem.2006.7.1.001" @default.
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