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• W83008897 abstract "Publisher Summary The performance advantages of GaAs devices for microwave circuits have been realized for over two decades in the form of hybrid circuits utilizing discrete GaAs transistors. The further advantages of smaller size, lower weight, higher reliability, and lower cost in high-volume production are now realized routinely through MMIC technology. The MESFET has become the workhorse of the MMIC industry, while more complex and costly devices, such as HBT and HEMTs, are beginning to play important roles in high-performance niches. Two of the key factors in the maturation of MMIC technology are improved models and improved CAD tools to permit accurate simulation of performance for enhanced first pass design success. Although highly complex, MMIC processing has stabilized sufficiently that MMICs can be produced at reasonably high yields and at affordable cost. Several GaAs foundries are now processing 4 wafers which MMIC technology has reached a state of maturity that makes high-volume systems applications practical will further reduce MMIC costs. Finally, a wide variety of packages is available to cover the range of MMIC packaging requirements, but further work must be done to reduce costs." @default.
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• W83008897 date "1995-01-01" @default.
• W83008897 modified "2023-09-23" @default.
• W83008897 title "MMIC Technology Overview" @default.
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• W83008897 doi "https://doi.org/10.1016/b978-012257735-2/50002-4" @default.
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