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• W838713086 abstract "In 2007 there was an important change in the architecture of nanotransistors - the buildingblocks of modern logic and memory devices. This change was from utilising thermallygrown silicon dioxide as a dielectric to so-called high-_ hafnium oxide dielectricsgrown by atomic layer deposition. The _rst production logic devices of this era used ahafnium oxide dielectric layer deposited by thermal atomic layer deposition; using HfCl4and H2O as the precursors. Present day fabrication makes use of hafnium oxide-basedatomic-layer-deposited dielectric _lms. The latest nanotransistor devices utilise a thirdgeneration hafnium oxide-based dielectric material.This thesis examines hafnium oxide-based thin _lm dielectric materials prepared bythermal atomic layer deposition on silicon substrates. Speci_cally the enhancement ofthe dielectric response of hafnium oxide by the addition of other elements is examined.Two ternary materials systems were deposited by thermal atomic layer deposition andanalysed: titanium-hafnium oxide and cerium-hafnium oxide. Hafnium oxide _lms weredeposited to be used as measurement benchmarks. Cerium oxide _lms were also depositedand analysed in their own right as potential dielectric layers.The hafnium oxide and both ternary deposition experiments used (MeCp)2Hf(OMe)(Me)as the hafnium precursor. The titanium-hafnium oxide growth used Ti(iOPr)4 as a titaniumsource and the cerium oxide and cerium-hafnium oxide work utilised Ce(mmp)4as a cerium source. Post-deposition specimen sets consisted of an as-deposited sample,a sample spike-annealed in N2 at 850 _C and a sample annealed for 30 minutes at 500_C. These annealing regimes were performed to mimic typical gate-_rst and gate-lasttransistor processing steps. The compositions and thicknesses of the _lms were measuredusing medium energy ion scattering. The structure of the _lms was analysed byX-ray di_raction and Raman spectroscopy. Capacitance-voltage and current density-_eld measurements were taken from fabricated MOS capacitor specimens to assess thedielectric response of the _lms.X-ray di_raction and Raman measurements showed that un-doped HfO2 had monocliniccrystallinity as-deposited and after the two annealing regimes. The dielectric constantand leakage current density, 17 and 1.7_10􀀀7 A/cm2 at -1 MV/cm respectively, are consistent with values reported in the literature for HfO2 _lms.The addition of titanium suppressed the crystallinity of the material resulting in amorphous_lms in compositions with Ti0:3Hf0:7O2 titanium and above. The optimum electricalresults were recorded for the titanium-hafnium oxide material in the compositionTi0:5Hf0:5O2 which had a dielectric constant of 35 as-deposited and a leakage currentdensity of 1.0_10􀀀7 A/cm2 at -1 MV/cm. This composition of _lm demonstrated similarvalues after the 500 _C/30 min anneal but both dielectric constant and leakagecurrent density su_ered after the 850 _C/spike anneal; 22 and 1.8 _10􀀀6 A/cm2 at -1MV/cm respectively. Films with compositions of Ti0:1Hf0:9O2 demonstrated much lowerdielectric constant and higher leakage current density, especially after heat treatment.The addition of cerium in a Ce0:11Hf0:89O2 composition was found to suppress crystallinityas-deposited and then provoke a lattice-substitutional phase change to themetastable tetragonal/cubic phase after both types of heat treatment. This ceriumactivatedphase change resulted in a molar volume modulation compared to un-dopedHfO2. An increased dielectric constant compared to un-doped HfO2 of 31 was recordedfor the 500 _C/30 min anneal with the 850 _C/spike anneal resulting in a lower value of21. Leakage current density was 1.3 _10􀀀7 A/cm2 and 3.2 _10􀀀7 A/cm2 at -1 MV/cmrespectively for the same anneals.Deposition with Ce(mmp)4 and water was found to result in cubic crystalline _lms acrossa growth temperature range 150{350 _C. The frequency dependency of the dielectricproperties was found to be inuenced by the crystallite size which was governed by thedeposition temperature. The highest dielectric constant, 42, was measured for the 150_C growth temperature with C-V measurements performed at 1 MHz.The two doped HfO2-based materials systems studied have demonstrated potential asdielectric materials for use in future nanoelectronic devices." @default.
• W838713086 created "2016-06-24" @default.
• W838713086 creator A5002070840 @default.
• W838713086 date "2013-01-01" @default.
• W838713086 modified "2023-10-16" @default.
• W838713086 title "Hafnium oxide-based dielectrics by atomic layer deposition" @default.
• W838713086 cites W1264172721 @default.
• W838713086 cites W129012364 @default.
• W838713086 cites W1491885026 @default.
• W838713086 cites W2095873514 @default.
• W838713086 cites W2129940722 @default.
• W838713086 cites W2942638208 @default.
• W838713086 cites W3022497021 @default.
• W838713086 cites W3027494344 @default.
• W838713086 cites W324409780 @default.
• W838713086 cites W575086725 @default.
• W838713086 hasPublicationYear "2013" @default.
• W838713086 type Work @default.
• W838713086 sameAs 838713086 @default.
• W838713086 citedByCount "0" @default.
• W838713086 crossrefType "dissertation" @default.
• W838713086 hasAuthorship W838713086A5002070840 @default.
• W838713086 hasConcept C119599485 @default.
• W838713086 hasConcept C127413603 @default.
• W838713086 hasConcept C133386390 @default.
• W838713086 hasConcept C16317505 @default.
• W838713086 hasConcept C165801399 @default.
• W838713086 hasConcept C171250308 @default.
• W838713086 hasConcept C172385210 @default.
• W838713086 hasConcept C179104552 @default.
• W838713086 hasConcept C185592680 @default.
• W838713086 hasConcept C191897082 @default.
• W838713086 hasConcept C192562407 @default.
• W838713086 hasConcept C2361726 @default.
• W838713086 hasConcept C2779227376 @default.
• W838713086 hasConcept C2779851234 @default.
• W838713086 hasConcept C2780657402 @default.
• W838713086 hasConcept C49040817 @default.
• W838713086 hasConcept C52780932 @default.
• W838713086 hasConcept C534791751 @default.
• W838713086 hasConcept C544956773 @default.
• W838713086 hasConcept C546638069 @default.
• W838713086 hasConcept C69544855 @default.
• W838713086 hasConceptScore W838713086C119599485 @default.
• W838713086 hasConceptScore W838713086C127413603 @default.
• W838713086 hasConceptScore W838713086C133386390 @default.
• W838713086 hasConceptScore W838713086C16317505 @default.
• W838713086 hasConceptScore W838713086C165801399 @default.
• W838713086 hasConceptScore W838713086C171250308 @default.
• W838713086 hasConceptScore W838713086C172385210 @default.
• W838713086 hasConceptScore W838713086C179104552 @default.
• W838713086 hasConceptScore W838713086C185592680 @default.
• W838713086 hasConceptScore W838713086C191897082 @default.
• W838713086 hasConceptScore W838713086C192562407 @default.
• W838713086 hasConceptScore W838713086C2361726 @default.
• W838713086 hasConceptScore W838713086C2779227376 @default.
• W838713086 hasConceptScore W838713086C2779851234 @default.
• W838713086 hasConceptScore W838713086C2780657402 @default.
• W838713086 hasConceptScore W838713086C49040817 @default.
• W838713086 hasConceptScore W838713086C52780932 @default.
• W838713086 hasConceptScore W838713086C534791751 @default.
• W838713086 hasConceptScore W838713086C544956773 @default.
• W838713086 hasConceptScore W838713086C546638069 @default.
• W838713086 hasConceptScore W838713086C69544855 @default.
• W838713086 hasLocation W8387130861 @default.
• W838713086 hasOpenAccess W838713086 @default.
• W838713086 hasPrimaryLocation W8387130861 @default.
• W838713086 hasRelatedWork W1536165220 @default.
• W838713086 hasRelatedWork W1989785069 @default.
• W838713086 hasRelatedWork W2092991010 @default.
• W838713086 hasRelatedWork W2105484339 @default.
• W838713086 hasRelatedWork W2164707888 @default.
• W838713086 hasRelatedWork W2167359909 @default.
• W838713086 hasRelatedWork W2184155210 @default.
• W838713086 hasRelatedWork W2304469523 @default.
• W838713086 hasRelatedWork W2317830135 @default.
• W838713086 hasRelatedWork W2400387678 @default.
• W838713086 hasRelatedWork W2553360620 @default.
• W838713086 hasRelatedWork W2581450533 @default.
• W838713086 hasRelatedWork W2768621771 @default.
• W838713086 hasRelatedWork W2788079496 @default.
• W838713086 hasRelatedWork W2913028462 @default.
• W838713086 hasRelatedWork W2966162698 @default.
• W838713086 hasRelatedWork W2981921780 @default.
• W838713086 hasRelatedWork W3081744936 @default.
• W838713086 hasRelatedWork W3099361674 @default.
• W838713086 hasRelatedWork W3134228459 @default.
• W838713086 isParatext "false" @default.
• W838713086 isRetracted "false" @default.
• W838713086 magId "838713086" @default.
• W838713086 workType "dissertation" @default.