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- W8426 abstract "The mass of a silicon film for an amorphous device cannot be deposited by ion implantation. It is likely, however, that implantation can be used to modify an existing nonamorphos silicon film to achieve the material characteristics and device structure required for an amorphous cell. This specific possibility is to be examined. Cell devices are to be fabricated of CVD polysilicon deposited upon isolated substrates. Implanatation is to be employed to amorphize and hydrogenate the active material of the already functional devices. Two ion implantation machines being used for investigation under this program can provide the ions of immediate interest, /sup 1/H/sup +/, /sup 11/B/sup +/, /sup 16/O/sup +/, /sup 19/F/sup +/, /sup 28/Si/sup +/, /sup 31/P/sup +/, /sup 40/Ar/sup +/, at energies from 10 through 200 keV and at beam currents of a few hundred microamperes or more. Some of the ions, hydrogen in particular, may be utilized in very high level doses. The available implanters are adequate for study purposes. Much higher current machines would be needed for cost effective production processing. Such machines are already feasible by use of designs based upon existing technology. Investigations under this program are to emphasize the use of cell devices to provide information regarding application of ion implantation to amorphous silicon cells. Special ion implantation procedures and analyses are required. Developmental activities described include the preparation of implantation capabilities and procedures, preparation of processing routines for a test cell device and preliminary evaluation of the effects of hydrogen implantation upon operation of devices. (WHK)" @default.
- W8426 created "2016-06-24" @default.
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- W8426 date "1979-08-01" @default.
- W8426 modified "2023-09-27" @default.
- W8426 title "Amorphous silicon solar cells by hydrogen implantation. Quarterly report No. 2, 1 April-30 June 1979" @default.
- W8426 doi "https://doi.org/10.2172/5696726" @default.
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