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• W84635296 abstract "The stabilization of A15 Nb 3 Ge in its high-T c form is of fundamental interest and also technologically important. This chapter discusses the influence of gaseous impurities on Nb 3 Ir and studies epitaxial growth on Nb 3 Ir; at the same time it discusses how an improvement of T c and phase purification of the Nb 3 Ge was observed. The structural and phase relationships of Nb 3 Ge films are explained by using the getter sputtering method of film preparation. The getter sputter deposition apparatus for film deposition is modified to permit deposition from two independent targets without breaking vacuum. When the Rutherford backscattering analysis of a multilayered Nb 3 Ge/Nb 3 Ir was conducted, it indicated discrete layers in T c and the results were disappointing. In addition, multilayered films and single-layer films showed no evidence of preferred grain growth as well. It was also discovered that the long deposition times of thick multilayered films permit annealing and grain growth of the A15 Nb 3 Ge phase at the expense of competing phases." @default.
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• W84635296 date "1980-01-01" @default.
• W84635296 modified "2023-09-25" @default.
• W84635296 title "CHARACTERISTICS OF GETTER SPUTTERED THIN FILMS OF Nb3Ge AND MULTILAYERED FILMS OF Nb3Ge/Nb3Ir" @default.
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• W84635296 doi "https://doi.org/10.1016/b978-0-12-676150-4.50011-1" @default.
• W84635296 hasPublicationYear "1980" @default.
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