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• W84646218 abstract "Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in-situ Auger electron spectrometry. The substrates were characterized by x-ray analysis and SEM in the topographical and electron diffraction mode. It was found that on polycrystalline tungsten with a (100) orientation, silicon was grown with a grain size measuring 3000 A in cross section and with (110) orientation below 630/sup 0/C. At 670/sup 0/C, silicon grains had grown to one micron in cross section and these grains had (111) and (110) orientations. On polycrystalline molybdenum substrates with (100) orientation, silicon grains measuring 2000 A across grew with a (110) orientation as high as 670/sup 0/C. The presence of phosphorus in the silicon was responsible for attaining these elevated temperatures with silicide formations. Heteroepitaxial silicon was grown on polycrystalline MoSi/sub 2/ at 800/sup 0/C. The silicon grew on (111) MoSi/sub 2/ grains. This growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation. Above 950/sup 0/C silicon growth was no longer heteroepitaxial but crystals 80 ..mu..m in cross section were obtained. The presence of oxygen at a partial pressure of 1 x 10/sup -10/ torr was found to reduce the size of silicon grains at 1100/sup 0/C." @default.
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• W84646218 date "1979-01-01" @default.
• W84646218 modified "2023-09-26" @default.
• W84646218 title "Efficient solar cells by space processing. Final report, October 1, 1978-December 14, 1979" @default.
• W84646218 doi "https://doi.org/10.2172/5287304" @default.
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