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- W8489129 abstract "High temperature semiconductor devices are desirable for electronic control systems in automobiles. Silicon carbide is a promising semiconductor material for this purpose, because of its wide bandgap and physical stability[l]. Many devices fabricated in silicon carbide material have been reported[2–6]. Recently, a depletion-mode MOSFET, operating at 650°C, was reported by Palmour et al.[7]; this report demonstrates the high temperature capabilities of SiC devices." @default.
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- W8489129 date "1989-01-01" @default.
- W8489129 modified "2023-09-26" @default.
- W8489129 title "Fabrication of MOSFETs on β-SiC Single Crystalline Layers Grown on Si(100) Substrates" @default.
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- W8489129 doi "https://doi.org/10.1007/978-3-642-75048-9_37" @default.
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