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- W85063194 abstract "Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In 0.53 Ga 0.47 As-In 0 52 Al 0 . 48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~ 1 × 10 7 ohm/square have been obtained on LT-In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As with THz performances that include sub-picosecond recombination times and over 50 dB THz power spectrum dynamic range. The LT-In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As system shows promise for next generation efficient and portable all-fibre THz imaging systems." @default.
- W85063194 created "2016-06-24" @default.
- W85063194 creator A5040430821 @default.
- W85063194 date "2013-01-01" @default.
- W85063194 modified "2023-09-25" @default.
- W85063194 title "Semiconductor material development for terahertz applications" @default.
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- W85063194 doi "https://doi.org/10.1533/9780857096494.2.464" @default.
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