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- W850767967 abstract "Si semiconductor strain gauge thermal coefficient of resistance /TCR/ reduction by high energy electron irradiation" @default.
- W850767967 created "2016-06-24" @default.
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- W850767967 date "1967-01-14" @default.
- W850767967 modified "2023-09-27" @default.
- W850767967 title "A radiation method of improving the temperature characteristics of silicon semiconductor strain gages." @default.
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