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- W85228311 abstract "A theory for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) is presented. In the section on deposition and doping studies, some recent results obtained with the rf magnetron deposition system are described. Other results show that additions of Ar to dc or ac SiH/sub 4/, discharges cause the dark conductivity and photoconductivity to increase. Other data show that the addition of SiF/sub 4/ to SiH/sub 4/ discharges cause the photoluminescence intensity to decrease. In the section on experimental methods for characterizing a-Si:H, recent work involving photoconductivity spectra, the photoelectromagnetic effect, and the Hall effect in undoped a-Si:H is briefly described. Preliminary data on the photo-Hall effect indicates mobilities in the range of 1 to 13 cm/sup 2/V/sup -1/S/sup -1/ for electrons and 0.1 to 2.5 cm/sup 2/V/sup -1/S/sup -1/ for holes. Measurements of the surface photovoltage have been used to estimate the distribution of surface states on a-Si:H. Tunneling measurements have also been used to characterize the surface and bulk states in MIS junctions. A new technique for determining the optical absorption in the band-tail states in a-Si:H is described. Information on stacked or multiple-junction a-Si:H solar cells and on large-area, series-connected cells is given.more » In the section on theoretical and experimental evaluation of solar-cell parameters, the influence of photoconductive gain on the fill factor of a-Si:H cells is discussed, and an upper limit of approx. 380 A is established for the hole diffusion length in a-Si:H films made in an rf capacitive discharge. Some characteristics of Pd-Schottky-barrier cells for different processing histories are presented.« less" @default.
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- W85228311 date "1979-07-01" @default.
- W85228311 modified "2023-09-23" @default.
- W85228311 title "Amorphous thin films for solar-cell applications. Quarterly report No. 3, 12 April 1979-11 July 1979" @default.
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