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- W853975852 abstract "Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators." @default.
- W853975852 created "2016-06-24" @default.
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- W853975852 date "1989-01-01" @default.
- W853975852 modified "2023-09-23" @default.
- W853975852 title "BIN Diode For Submillimeter Wavelengths" @default.
- W853975852 hasPublicationYear "1989" @default.
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