FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W854935792> ?p ?o ?g. }

• W854935792 abstract "Ion beam methods are used to analyse material (Ion Beam Analysis, IBA) and to modify the target (Ion Beam Modification of Materials, IBMM). In this thesis, ion beams have been used in various IBA techniques to investigate the surface nanometre structures, and also in an ion beam synthesis (IBS) technique to form thin films and to modify material properties. The work is divided into two main parts: the development of Time-of-Flight Energy Elastic Recoil Detection (ToF-E ERD) and Delta E-E ERD IBA-techniques, and the investigation of silicide formation in silicide/Si and silicide/GaAs-based systems. The first part of this thesis deals with the development of ToF-E ERD and Delta E-E ERD. The detection efficiency of recoils for ToF-E ERD systems with masses ranging from H up to Nb at energies from 0.05 - 1 MeV per nucleon has been investigated. It was observed that the detection efficiency for the ToF-E detector telescope was dependent on the electronic stopping power (Se) in the carbon foils, which in turn depended upon the recoil mass and energy. The detection efficiency of a single time detector could be expressed as a simple empirical formula as a function of Se. The response of thin self-supporting p-i-n Delta E Si detectors for light recoils has also been characterised using a conventional ERD set-up with a detector telescope that measured Time-of-Flight (ToF), the signal from the thin Delta E detector and the residual energy of each recoil. The correlation of the signals could be modelled with a near-constant energy loss per channel and a zero offset that corresponded to energy loss in inactive layers of the thin detector. The regression lines revealed that the standard errors of the estimate associated with DE and energy loss were very similar and were dominated by the resolution of the energy loss measurements. In order to obtain high-quality nanometre-sized thermodynamically and chemically stable electrical contacts, silicide phase formation and foreign atom incorporation have been investigated under pulsed keV metal-ion implantation. The metal ions were produced from a MEtal Vapour Vacuum Arc (MEVVA) ion source with high currents and high achievable doses. This new MEVVA IBS technique opens a promising low-temperature method of forming metallic silicide in vacuum. The approach to high-dose equilibrium during MEVVA bombardment has been studied through measurements of the partial sputtering yield. Implantation-induced surface topography development shows that defects and disorders from the initial surface could result in very different morphologies. Interfacial reactions between Si (75 nm), metal Pd (50 nm) and substrates, GaAs and AlxGa(1-x)As have also been studied to investigate the formation and thermal stability of silicides on GaAs and AlxGa(1-x)As. (Less)" @default.
• W854935792 created "2016-06-24" @default.
• W854935792 creator A5008168090 @default.
• W854935792 date "1998-01-01" @default.
• W854935792 modified "2023-09-27" @default.
• W854935792 title "Applications of Ion Beam Methods in Silicide/Si and Silicide/GaAs Nanometre Structures" @default.
• W854935792 hasPublicationYear "1998" @default.
• W854935792 type Work @default.
• W854935792 sameAs 854935792 @default.
• W854935792 citedByCount "0" @default.
• W854935792 crossrefType "dissertation" @default.
• W854935792 hasAuthorship W854935792A5008168090 @default.
• W854935792 hasConcept C120665830 @default.
• W854935792 hasConcept C121332964 @default.
• W854935792 hasConcept C145148216 @default.
• W854935792 hasConcept C146904657 @default.
• W854935792 hasConcept C168834538 @default.
• W854935792 hasConcept C171250308 @default.
• W854935792 hasConcept C185544564 @default.
• W854935792 hasConcept C19067145 @default.
• W854935792 hasConcept C192562407 @default.
• W854935792 hasConcept C2776523803 @default.
• W854935792 hasConcept C2776668124 @default.
• W854935792 hasConcept C2780901251 @default.
• W854935792 hasConcept C49040817 @default.
• W854935792 hasConcept C50774322 @default.
• W854935792 hasConcept C544956773 @default.
• W854935792 hasConcept C62520636 @default.
• W854935792 hasConcept C77066764 @default.
• W854935792 hasConcept C94915269 @default.
• W854935792 hasConcept C98960154 @default.
• W854935792 hasConceptScore W854935792C120665830 @default.
• W854935792 hasConceptScore W854935792C121332964 @default.
• W854935792 hasConceptScore W854935792C145148216 @default.
• W854935792 hasConceptScore W854935792C146904657 @default.
• W854935792 hasConceptScore W854935792C168834538 @default.
• W854935792 hasConceptScore W854935792C171250308 @default.
• W854935792 hasConceptScore W854935792C185544564 @default.
• W854935792 hasConceptScore W854935792C19067145 @default.
• W854935792 hasConceptScore W854935792C192562407 @default.
• W854935792 hasConceptScore W854935792C2776523803 @default.
• W854935792 hasConceptScore W854935792C2776668124 @default.
• W854935792 hasConceptScore W854935792C2780901251 @default.
• W854935792 hasConceptScore W854935792C49040817 @default.
• W854935792 hasConceptScore W854935792C50774322 @default.
• W854935792 hasConceptScore W854935792C544956773 @default.
• W854935792 hasConceptScore W854935792C62520636 @default.
• W854935792 hasConceptScore W854935792C77066764 @default.
• W854935792 hasConceptScore W854935792C94915269 @default.
• W854935792 hasConceptScore W854935792C98960154 @default.
• W854935792 hasLocation W8549357921 @default.
• W854935792 hasOpenAccess W854935792 @default.
• W854935792 hasPrimaryLocation W8549357921 @default.
• W854935792 hasRelatedWork W1138192070 @default.
• W854935792 hasRelatedWork W1967665345 @default.
• W854935792 hasRelatedWork W1972634108 @default.
• W854935792 hasRelatedWork W1981044907 @default.
• W854935792 hasRelatedWork W1983381378 @default.
• W854935792 hasRelatedWork W2033053206 @default.
• W854935792 hasRelatedWork W2034705052 @default.
• W854935792 hasRelatedWork W2037394317 @default.
• W854935792 hasRelatedWork W2037856578 @default.
• W854935792 hasRelatedWork W2049522305 @default.
• W854935792 hasRelatedWork W2052251683 @default.
• W854935792 hasRelatedWork W2078385737 @default.
• W854935792 hasRelatedWork W2079953724 @default.
• W854935792 hasRelatedWork W2092390181 @default.
• W854935792 hasRelatedWork W2095380453 @default.
• W854935792 hasRelatedWork W2262029805 @default.
• W854935792 hasRelatedWork W2314253766 @default.
• W854935792 hasRelatedWork W2323537343 @default.
• W854935792 hasRelatedWork W3123483602 @default.
• W854935792 hasRelatedWork W2741704090 @default.
• W854935792 isParatext "false" @default.
• W854935792 isRetracted "false" @default.
• W854935792 magId "854935792" @default.
• W854935792 workType "dissertation" @default.