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- W856127373 abstract "In micromachined devices, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. Additionally, AlN features a high chemical and thermal stability, making it also a good choice for passivation purposes for microelectronic devices. With those aspects and current trends towards minimization in mind, the dielectric reliability of ultra-thin AlN films is of utmost importance for the realization of advanced device concepts. In this study, we present a systematic analysis of the transversal dielectric strength of sputtered AlN thin films of varying film thickness (i.e. 70 nm to 400 nm) up to 300 °C. Using a time-zero approach, the dielectric strength is measured by applying a voltage ramp to stress the film up to the point of breakdown. The results are subsequently analyzed using the Weibull approach. For temperatures T > 180 °C, the characteristic breakdown field Eb,0 follows the relationship Eb, 0 ∼ T2, while showing a weak temperature dependence below, thus indicating a transitory regime between thermally induced breakdown at higher T and electrically induced breakdown at lower T. It is shown, that the characteristic breakdown field increases at lower film thickness which is in good correlation with a corresponding decrease in leakage current." @default.
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- W856127373 date "2015-06-01" @default.
- W856127373 modified "2023-10-14" @default.
- W856127373 title "Impact of film thickness and temperature on the dielectric breakdown behavior of sputtered aluminum nitride thin films" @default.
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- W856127373 doi "https://doi.org/10.1016/j.mee.2015.06.001" @default.
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