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- W858169947 abstract "We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AlN) buried insulators, rather than the conventional silicon-dioxide (SiO 2 ). Since the thermal conductivity of AlN is about 100 times that of SiO 2 , AlN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET. In this work, we compare the performance of AlN-based SOI with that of SiO 2 -based SOI and conventional MOSFETs. We find that AlN SOI does indeed remove the self-heating penalty of SOI. However, several device design trade-offs remain, which our simulations highlight." @default.
- W858169947 created "2016-06-24" @default.
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- W858169947 date "2000-01-31" @default.
- W858169947 modified "2023-09-27" @default.
- W858169947 title "Analysis of Aluminum-Nitride SOI for High-Temperature Electronics" @default.
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