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• W86659498 abstract "Thin-films of copper oxide <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex Notation=TeX>$({hbox{Cu}}_{x}{hbox{O}})$</tex></formula> were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150–450 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex></formula> ). The films produced at temperatures of 200, 250 and 300 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex></formula> showed high Hall motilities of 2.2, 1.9 and 1.6 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${hbox{cm}}^{2} {hbox{V}}^{-1}{hbox{s}}^{-1}$</tex></formula> , respectively. Single <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${hbox{Cu}}_{2}{hbox{O}}$</tex> </formula> phases were obtained at 200 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex></formula> and its conversion to CuO starts at 250 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex></formula> . For lower thicknesses <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$sim$</tex> </formula> 40 nm, the films oxidized at 250 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex></formula> showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex Notation=TeX>${hbox{Cu}}_{2}{hbox{O}}$</tex></formula> (at 200 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex></formula> ) and CuO (at 250 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ ^{circ}{hbox{C}}$</tex> </formula> ) with On/Off ratios of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${hbox{6}}times {hbox{10}}^{1}$</tex></formula> and <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${hbox{1}}times {hbox{10}}^{2}$</tex></formula> , respectively." @default.
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• W86659498 date "2013-09-01" @default.
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• W86659498 title "p-Type <formula formulatype=inline><tex Notation=TeX>${hbox{Cu}}_{x}{hbox{O}}$</tex> </formula> Thin-Film Transistors Produced by Thermal Oxidation" @default.
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