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- W872671325 abstract "Electron scattering mechanisms in low-dimensional semiconductor systems have been investigated at low temperatures. The influence of scatterers on magnetotransport in a high-mobility, GaAs/AlGaAs two-dimensional electron gas (2DEG) system was studied. A certain number of scattering centres are introduced into the 2DEGs by proton irradiation and can be removed by annealing. The transport properties were compared before and after irradiation and subsequent annealing. The Coulomb scattering and alloy scattering in modulation-doped GaInAs/InP quantum wells (QWs) have been studied. To modify the Coulomb scattering, the self-assembled InAs quantum dots located just above the QWs were produced by MOVPE. A top gate was used to control the charging and decharging of the InAs dots. The experimental results show that the Coulomb field from the trapped electrons is important for inter-channel scattering processes between edge channels formed in magnetic fields. Also, the fractional quantum Hall effect (FQHE) is observed in the GaInAs/InP QWs. To the best of our knowledge, this is the first observation of the FQHE in GaInAs/InP quantum wells. The fabrication and characterization of regrown GaInAs/InP electron waveguides are presented. In particular, the conductance oscillations induced by the formation of longitudinal resonant electron states in the waveguide are observed and analysed. (Less)" @default.
- W872671325 created "2016-06-24" @default.
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- W872671325 date "1999-01-01" @default.
- W872671325 modified "2023-09-26" @default.
- W872671325 title "Electron Scattering Mechanisms in Low-Dimensional Transport Physics" @default.
- W872671325 hasPublicationYear "1999" @default.
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