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- W888840998 abstract "In this work a new model of electrical resistivity is proposed in order to study the relationship between surface roughness geometry and thin films resistivity. The model is based on the numerical dynamic averaging of electron mean free path over whole simulated structure of rough film. For current-in-plane configuration the resistivity increases with decreasing film thickness faster than for current-perpendicular-to-plane one. Our simulations showed that big roughness depth and fine in-plane spatial period of roughness are crucial factors increasing the resistivity of ultrathin metallic layers." @default.
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- W888840998 date "2010-11-01" @default.
- W888840998 modified "2023-09-25" @default.
- W888840998 title "Model of Anisotropic Electrical Resistivity in Rough Thin Films" @default.
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- W888840998 doi "https://doi.org/10.12693/aphyspola.118.859" @default.
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