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- W898714103 abstract "This thesis aims to shed light on physical mechanisms which lead to hysteresis in the current- voltage (I–V) and capacitance-voltage (C–V) characteristics of organic thin-film transistors. For this purpose, transient and bias dependent instabilities in the I–V and C–V characteristics of pentacene based organic thin-film transistors (OTFTs) are investigated. Through measurements and device simulations, it has been shown that trapping of majority charge carriers, i.e. holes, in the organic semiconductor pentacene leads to the hysteresis observed in these characteristics. Furthermore, behavioral PSpice models have been developed, which reproduce the measured device characteristics of OTFTs.Die vorliegende Arbeit beschaftigt sich mit den physikalischen Mechanismen, die zu einem Hystereseverhalten in den Strom-Spannungs- (I–V) und Kapazitat-Spannungs- (C–V) Kennlinien bei organischen Dunnschichttransistoren fuhren. Zu diesem Zweck wurden die transienten und spannungsabha?ngigen Instabilitaten in den I–V und C–V Kennlinien der organischen Dunnschichttransistoren mit Pentacen als organischem Halbleiter untersucht. Anhand elektrischer Messungen und Bauelementsimulationen wurde gezeigt, dass Haftstellen im organischen Halbleiter, welche die Majoritatsladungstrager (Locher) einfangen, zu der Hysterese in den gemessenen Kennlinien fuhren. Weiterhin wurden Behavioral-Modelle in PSpice entwickelt, welche das gemessene Strom-Spannungs- und Kapazitat- Spannungsverhalten der organischen Dunnschichttransistoren reproduzieren." @default.
- W898714103 created "2016-06-24" @default.
- W898714103 creator A5022278860 @default.
- W898714103 date "2013-01-01" @default.
- W898714103 modified "2023-09-23" @default.
- W898714103 title "Understanding and Modeling the Hysteresis in Current-Voltage (I–V ) and Capacitance-Voltage (C–V ) Characteristics of Organic Thin-Film Transistors" @default.
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