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• W903265651 abstract "In this work studies of MOVPE growth of InAlGaAs/AlGaAs/GaAs heterostructures are presented. The HRXRD and SIMS measurements indicate the high structural and optical properties as well as high uniformity of thickness and composition of InAlGaAs quantum wells. This work is the first step towards elaboration of the technology of the strained InAlGaAs/GaAs heterostructures for advanced optoelectronic devices working in the visible part of the spectrum. The investigations of Si (n-type), Zn (p-type) δ-doped GaAs epilayers and centre Si-δ-doped InxGa1-xAs single quantum well (SQW) are presented. The δ-doping layer was formed by SiH4 or DEZn introduction during the growth interruption. The electrical and optical properties of the obtained structures were examined using C–V measurement, EC–V electrochemical profiler, Raman spectroscopy (RS), photoreflectance (PR) and photocurrent (PC) spectroscopies. Technology of thick GaN layers grown on sapphire by HVPE is very promising as a part of freestanding GaN substrates manufacturing. Further works will be focused on the optimisation of growth, separating layers from substrates and surface polishing. The influence of the growth parameters on the properties of (Ga, Al)N/Al2O3 and Mg dopant incorporation was studied." @default.
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• W903265651 date "2004-01-01" @default.
• W903265651 modified "2023-10-09" @default.
• W903265651 title "Advanced technology of AIII-BV and AIII-N structures for microelectronics application" @default.
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