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• W90824712 abstract "Nanocrystalline α-Fe2O3 thin films were deposited by successive ionic layer adsorption and reaction method onto glass substrates. The X-ray diffraction study revealed that α-Fe2O3 films are nanocrystalline in nature with rhombohedral structure. The morphological investigations were carried out by using field emission scanning electron and atomic force microscopy studies. The random distribution of α-Fe2O3 nano-grains with agglomeration is observed on the substrate surface. The room temperature electrical resistivity of α-Fe2O3 film is of the order of 9.46 × 10 2 Ω cm. The thermo-emf measurements confirmed n-type semiconducting nature of SILAR grown α-Fe2O3 films. The optical absorption measurements showed that α-Fe2O3 exhibits direct and indirect band gap energies of the order of 1.92 and 2.97eV respectively. These encouraging results make preparation of α-Fe2O3 by SILAR method useful in the development of optoelectronic devices such as sensing and photovoltaic devices." @default.
• W90824712 created "2016-06-24" @default.
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• W90824712 date "2014-01-01" @default.
• W90824712 modified "2023-09-24" @default.
• W90824712 title "Preparation and Characterization of Nanocrystalline α-Fe 2 O 3 Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method" @default.
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