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- W909264950 abstract "Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy." @default.
- W909264950 created "2016-06-24" @default.
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- W909264950 date "2015-07-06" @default.
- W909264950 modified "2023-09-24" @default.
- W909264950 title "Te-doping of self-catalyzed GaAs nanowires" @default.
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- W909264950 doi "https://doi.org/10.1063/1.4926494" @default.
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