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- W91938227 abstract "The modification of materials by ion beams was initiated about 40 years ago in the early 1960s, as a spin-off from nuclear science. For good reasons, the first objective was to alter the electrical properties of semiconducting materials by the implantation of active dopants such as boron into silicon. It was recognized that energetic ion bombardment is accompanied by radiation damage which in covalently bonded crystals must be removed by thermal annealing. Nuclear particle accelerators and isotope separators were adapted for this new technology, with immediate success. Device yields were improved by one, and sometimes two orders of magnitude in comparison with thermo-chemical diffusion of dopants. A decade later, ion implantation became the preferred method for doping electronic microcircuits, and a multibillion dollar industry has been built on this, nowaday utilizing ion energies from a few eV to several MeV." @default.
- W91938227 created "2016-06-24" @default.
- W91938227 creator A5011089316 @default.
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- W91938227 date "2006-01-01" @default.
- W91938227 modified "2023-10-03" @default.
- W91938227 title "Ion Surface Treatment of Materials" @default.
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- W91938227 doi "https://doi.org/10.1016/b978-008044496-3/50006-x" @default.
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