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- W91962014 abstract "Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated." @default.
- W91962014 created "2016-06-24" @default.
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- W91962014 date "1988-10-03" @default.
- W91962014 modified "2023-09-25" @default.
- W91962014 title "Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride" @default.
- W91962014 doi "https://doi.org/10.21236/ada199974" @default.
- W91962014 hasPublicationYear "1988" @default.
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