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• W920500352 abstract "Relationship between etch current and morphology and porosity of porous silicon (PS) has been investigated. The gravimetric method is applied to measured the porosity of PS. As the current density increase, the silicon dissolution rate increases, resulting in a higher porosity and etching rate. The result shows that linear dependence of PS porosity and etching rate as a function of current density. The morphology of porous silicon was investigated by using cold field emission scanning electron micrograph (FE-SEM). The size of pores formed during anodization is predominantly controlled by the current density, with an increase in the pore size corresponding to an increase in the current density." @default.
• W920500352 created "2016-06-24" @default.
• W920500352 creator A5083900223 @default.
• W920500352 date "2010-01-01" @default.
• W920500352 modified "2023-09-24" @default.
• W920500352 title "Investigation of Relationship between Etch Current and Morphology and Porosity of Porous Silicon" @default.
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• W920500352 doi "https://doi.org/10.13160/ricns.2010.3.4.210" @default.
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