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• W92056692 abstract "We measured, in the 873-1173 K temperature range, the temperature- and Cd vapor-pressure-dependences of the free electron density in single CdTe(In) crystals with different In contents. Increasing the cooling rate of the crystals and/or decreasing the well-defined Cd vapor pressure reduced the free-electron density. We interpreted and modelled these phenomena and the crystal's high-temperature electrical properties within the framework of Kroger's point-defect theory. Our experiments demonstrated the possibility of controlling the free-electron density in CdTe(In) crystals by changing the cooling rate. We supplemented a point-defect structural study of CZT(In) crystals by low-temperature (80-420 K) electrical measurements. These findings allowed us to identify the nature of the point defects responsible for free-carrier scattering, which is an important parameter influencing the mutau-product value in detector-grade material." @default.
• W92056692 created "2016-06-24" @default.
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• W92056692 date "2009-08-01" @default.
• W92056692 modified "2023-10-13" @default.
• W92056692 title "Dopant Content and Thermal Treatment of ${rm Cd} _{1-{rm x}} {rm Zn} _{rm x} {rm Te} langle {rm In}rangle $: Effects on Point-Defect Structures" @default.
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• W92056692 doi "https://doi.org/10.1109/tns.2009.2021185" @default.
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