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- W923854306 abstract "An electrostatic spray deposition (ESD) method was applied to prepare both crystalline domains of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) and insulating films of poly(methyl methacrylate) (PMMA) for fabricating top-gate single-crystal organic field-effect transistors (OFETs). The electrical characteristics of the top-gate device were compared to those of the bottom-gate one (SiO2 bottom-gate insulator) with the same active layer, and the lower charge-trap density at the interface between the top-gate insulator and single-crystalline active layer was demonstrated. The drain current compression in the output characteristics of the top-gate device, however, occurred due to the large parasitic resistance between the source/drain electrodes and accumulation channel. Reducing the thickness of the single-crystalline active layer resulted in a high charge-carrier mobility of 0.29 cm2/V s (channel length of 5 μm)." @default.
- W923854306 created "2016-06-24" @default.
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- W923854306 date "2015-09-01" @default.
- W923854306 modified "2023-09-26" @default.
- W923854306 title "Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition" @default.
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- W923854306 doi "https://doi.org/10.1016/j.orgel.2015.05.042" @default.
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