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- W934222015 abstract "This chapter discusses ESD device simulation. The fundamental equation used in numerical simulation is to provide a qualitative understanding of the prerequisites and constraints of the approaches. This chapter has restricted itself to considering only short square current pulses as discharge waveforms. The evaluation is very beneficial for an ESD engineer to optimize process technology and design at the same time. The most important findings of this chapter can be summarized as the simulation of high-current densities under ESD stress requires correct treatment of electro-thermal transport and heat flow. Correct use of the device simulator for ESD simulation requires process-technology-specific calibration of SRH generation and recombination parameters. For the simulation of a realistic temperature distribution in the device, the correct treatment of thermal boundaries is highly relevant. It has been shown that the high-current IV characteristic can properly be reproduced by device simulation. Depending on the current regime, 2D simulation may be enough, or else, 3D simulation must be applied because of current instabilities in the snapback regimes. In device simulations, there is no simple failure criterion such as an increased leakage in a measurement. ESD device simulation can be applied to a wide variety of devices besides FETs. The current-to-failure dependence obtained from 2D device simulation represents a powerful extension and improvement of the classical description using analytical expressions." @default.
- W934222015 created "2016-06-24" @default.
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- W934222015 date "2003-01-01" @default.
- W934222015 modified "2023-09-24" @default.
- W934222015 title "ESD device simulation" @default.
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- W934222015 doi "https://doi.org/10.1016/b978-008044147-4/50005-7" @default.
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