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- W93674531 abstract "The microwave photoconductive decay (μ-PCD) technique is proved to be a powerful method in the qualification of semiconductor bulk materials. It is best applied for standard wafers with homogeneous material quality. However, this method has its limitations when measuring epi wafers or SOI structures. In its conventional realization the μ-PCD technique does not typically generate high enough signal originated from the thin epi layer in case of a highly doped substrate. The aim of the present work is the application of a new, improved microwave photoconductive decay technique with sensitivity exceeding that of the conventional techniques by orders of magnitude. It is shown that with a proper interpretation such a method is able to provide material quality information in case of epi and SOI structures. A set of iron contaminated p/p + wafers with different epi thicknesses were investigated in details. It was found that iron concentration level in epi wafers can be determined with reasonable accuracv even in thin epi lavers." @default.
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- W93674531 date "1999-01-01" @default.
- W93674531 modified "2023-09-23" @default.
- W93674531 title "Lifetime measurements in SOI and epi structures" @default.
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