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• W937464127 abstract "High performance ISFETs by means of a layer of poly Si nanostructures placed on the gate oxide has been fabricated. The pre-deposited poly Si layer has been treated in a RIE (Reactive Ion Etching) sequential etching/passivation process to attain porous structures. The impact of plasma power, gases flow rates, subsequence duration, and sequence repetition has been studied on the characteristics of the porous layer and the fabricated ISFETs in order to achieve high ion sensitive layer. The constant current pH sensitivity up to 500 mV/pH has been obtained." @default.
• W937464127 created "2016-06-24" @default.
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• W937464127 date "2012-01-01" @default.
• W937464127 modified "2023-10-14" @default.
• W937464127 title "P2.5.5 High pH-sensitive ion selective field effect transistor using porous poly Si gate" @default.
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• W937464127 doi "https://doi.org/10.5162/imcs2012/p2.5.5" @default.
• W937464127 hasPublicationYear "2012" @default.
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