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• W938854987 abstract "The energy band alignment between Al2O3/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy (XPS). The Al2O3 was deposited using an atomic layer deposition (ALD) tool. A valence band offset of 4.10 eV and a conduction band offset of 3.41 eV were obtained across the ALD-Al2O3/ML-MoS2 interface. For comparison, the valence band offset and a conduction band offset were also obtained for ALD-SiO2/ML-MoS2 interface. It was found out that ALD-Al2O3/ML-MoS2 interface has a larger conduction band offset, compared to that of ALD-SiO2/ML-MoS2 interface, which indicate ALD-Al2O3 served as the gate dielectric for n-type ML-MoS2 based field effect transistors has advantage over ALD-SiO2 in term of suppressing the gate leakage current." @default.
• W938854987 created "2016-06-24" @default.
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• W938854987 date "2015-11-01" @default.
• W938854987 modified "2023-10-15" @default.
• W938854987 title "Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy" @default.
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• W938854987 doi "https://doi.org/10.1016/j.jallcom.2015.07.207" @default.
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