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- W942311443 abstract "采用ICP-AES法测定了Ga^3＋：KTP晶体中掺质Ga^3＋离子含量，并由此得出Ga^3＋离子在相应晶体生长体系中的平均分配系数为0．0373；采用静电计和多频测试仪测定并计算出Ga^3＋：KTP晶体c向的电导率，将其与纯KTP晶体者进行比较。结果发现，Ga^3＋：KTP晶体c向电导率比纯KTP晶体c向电导率在交流情况下最大降低了两个数量级以上。文中对晶体c向电导率的降低机理进行了探讨。" @default.
- W942311443 created "2016-06-24" @default.
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- W942311443 date "2006-01-01" @default.
- W942311443 modified "2023-09-24" @default.
- W942311443 title "Ga^3＋：KTP晶体c向电导率的研究" @default.
- W942311443 hasPublicationYear "2006" @default.
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