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- W95026751 abstract "Abstract The thermal decomposition of HSiO 3/2 gels in argon gives rise first to a minor evolution of SiH 4 (below 500°C), then to a release of dihydrogen gas until complete dehydrogenation (up to 1000°C). From NMR, IR and ESR spectroscopy the second step appears to be associated with the formation of SiSi bonds in units Si(Si z O 4−z ); XANES indicates the significant presence of silica- and silicon-like sites as early as 500°C. The phase separation and the crystallisation of silica and silicon occur at higher temperatures. A mechanism based on silylene intermediates is proposed for the first steps of the process." @default.
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- W95026751 date "1992-01-01" @default.
- W95026751 modified "2023-09-30" @default.
- W95026751 title "THERMAL DECOMPOSITION OF HYDROSILSESQUIOXANE GELS UNDER ARGON" @default.
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- W95026751 doi "https://doi.org/10.1016/b978-0-444-89344-4.50011-2" @default.
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