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• W954852044 abstract "A silicon-on-insulator (SOI) technology has become a key tool for manufacturing of microsensors. A number of the SOI-based microsensors have been presented in the chapter. The developments are related mostly to non-electrical sensors. Most of them have been developed at Instytut Technologii Elektronowej (ITE) Warsaw, in collaboration with numerous partners. The chapter is divided into two main sections describing the technology and device issues. First, ITE expertise in the area of SOI technologies is described. The SOI CMOS processes based on wafers with a thick and thin device layers are presented. The CMOS technology has become an origin for a PaDEOx technique developed for narrow (order of 100 nm width) line fabrication on the silicon wafers, which allows for development of nanowire-based devices (e.g. multi-gate MOSFETs). The second branch of the SOI technologies, being under development in ITE, includes micromachining techniques. Based on the SOI technologies, a number of devices have been developed with the ITE participation. The following solutions have been presented: monolithic pixel detectors of ionizing radiation, sub-THz radiation detectors based on a concept of radiation-induced plasmon oscillations in the MOSFET channels, smart antennas with a reconfigurable aperture. Next, devices fabricated based on micromachining techniques have been mentioned, e.g. microactuators and probes for scanning thermal microscopy. Finally, development of SOI-based biochemical sensors for small volume sample testing is more widely described. These devices have been manufactured based on the PaDEOx technique and have been applied for analysis of hydrogen an metal ions in water solutions." @default.
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• W954852044 date "2014-01-01" @default.
• W954852044 modified "2023-09-23" @default.
• W954852044 title "SOI-Based Microsensors" @default.
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• W954852044 doi "https://doi.org/10.1007/978-3-319-08804-4_18" @default.
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