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• W95536360 abstract "Structural and optical properties of ~ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 1011 cm−2)). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (~0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics." @default.
• W95536360 created "2016-06-24" @default.
• W95536360 creator A5013119455 @default.
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• W95536360 date "2013-09-01" @default.
• W95536360 modified "2023-10-02" @default.
• W95536360 title "Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence" @default.
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• W95536360 doi "https://doi.org/10.1088/1674-1056/22/9/098102" @default.
• W95536360 hasPublicationYear "2013" @default.
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