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- W955576579 abstract "We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are de ned by the integration of side and top gates in a single device. In this con guration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of HfO2 or Al2O3/HfO2 composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current Ig < 10 −11 A at gate voltages |Vg| < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-o voltage at Vg = −3.5 V at a cost of Ig ≈ 10−6 A, which has been identi ed as a bulk leakage current." @default.
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- W955576579 date "2012-12-01" @default.
- W955576579 modified "2023-09-23" @default.
- W955576579 title "Electrostatic Gates for GaN/AlGaN Quantum Point Contacts" @default.
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- W955576579 doi "https://doi.org/10.12693/aphyspola.122.1026" @default.
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