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- W958196109 abstract "This chapter describes double injection in semiconductors. Double injection is not a new concept. The early experimental work on double-injection phenomena dealt mainly with negative resistance. The chapter presents a review that is primarily concerned with the development of double injection that occurred after 1963. The details of the framework were being filled in during this period, and the first quantitative experimental verification of the long structure regimes was obtained. In insulators and lightly doped semiconductors, current flow in many cases can be dominated by injected carriers of one or both types. This class of problems leads to a number of phenomena, including power-law currents, abrupt transitions in current, negative resistance, and oscillations. In addition, because injection effects are sensitive to recombination and trapping centers, they can be used to study the properties of such centers. These problems fall into two broad categories, single-carrier and two-carrier (double) injection phenomena. Double injection covers the cases when injected carriers of both types play a role in determining the behavior, even if the current is carried by only one type of carrier. They are the current flow equations. Recombination-center occupancy affects behavior in two ways: (1) it affects the lifetimes and the recombination kinetics directly and (2) it affects the amount of charge, which resides on the recombination centers and enters through Poisson's equation." @default.
- W958196109 created "2016-06-24" @default.
- W958196109 creator A5080664875 @default.
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- W958196109 date "1970-01-01" @default.
- W958196109 modified "2023-10-14" @default.
- W958196109 title "Chapter 4 Double Injection in Semiconductors" @default.
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- W958196109 doi "https://doi.org/10.1016/s0080-8784(08)62633-2" @default.
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