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- W96146716 abstract "Scaleup of hot filament chemical vapor deposition of diamond films requires knowledge of how filament geometry affects the deposition process. The effect of multiple filament geometry on the growth rate and surface morphology of diamond films is presented. Three factors were varied: the number of helical turns in a filament - 5, 10 or 15; the number of filaments present – 1 or 2; and the CH4 fraction in the CH4-H2 feed gas mixture – 0.25%, 0.5%, 0.75% or 1.0%. Other depositions parameters were 750 °C substrate temperature, 52 standard cm3/m total feed gas flow rate, and 5300 Pa deposition pressure. The deposition chamber volume was 1.9 liters. Increasing the CH4 concentration in the feed gas results in higher growth rates. However, increasing the number of filament turns in dual filaments systems resulted in lower than expected growth rates for dual 10 and 15 turn filaments. Those films that grew at lower than expected growth rates also display morphologies typical of films produced at lower CH4 concentrations. These effects may be due to saturation of those species participating in diamond formation with increase in filament surface area and CH4 gas fraction. The substrate surface area coverage of dual filament depositions was double that of the single filament depositions." @default.
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- W96146716 date "1991-01-01" @default.
- W96146716 modified "2023-10-16" @default.
- W96146716 title "Effects of Multiple Filament Geometry in the Hot Filament Deposition of Diamond Films" @default.
- W96146716 cites W1983500905 @default.
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- W96146716 doi "https://doi.org/10.1016/b978-0-444-89162-4.50078-6" @default.
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