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• W971879594 abstract "Publisher Summary This chapter discusses the experimental methods used to determine the concentrations and charge states of the native point defects in the III-V and II-VI semiconductors. It also reviews the usage of a chemical thermodynamic model to unify the very large amount of experimental data on the III-V semiconductors. In equilibrium at all temperatures above the absolute zero, a crystal contains point defects. These comprise vacant lattice sites, atoms located in the interstices between the lattice sites and, in the case of compound semiconductors, atoms sitting on the wrong lattice site. The point defects are either native (involving only atoms of the pure crystal) or are comprised of foreign atoms that may have been purposely added (dopants) or are residual impurities. In the III-V and II-VI compound semiconductors, native point defect concentrations can, at typical growth temperatures, be comparable or even greater than the intrinsic carrier concentration and can therefore influence the position of the Fermi level. This results in a complex interaction between the electrically active dopants and the native point defects. This chapter concludes by demonstrating how the dopant solubility, self and dopant diffusion, and annealing behavior and phase extent are all coupled to types, concentrations, and charge states of the native point defects." @default.
• W971879594 created "2016-06-24" @default.
• W971879594 creator A5044587880 @default.
• W971879594 date "2004-01-01" @default.
• W971879594 modified "2023-09-27" @default.
• W971879594 title "Point defects in compound semiconductors" @default.
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• W971879594 doi "https://doi.org/10.1016/b978-044451386-1/50017-9" @default.
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