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- W974548308 abstract "We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes." @default.
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- W974548308 date "2015-10-01" @default.
- W974548308 modified "2023-10-18" @default.
- W974548308 title "Double superstructures in InGaN/GaN nano-pyramid arrays" @default.
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- W974548308 doi "https://doi.org/10.1016/j.spmi.2015.07.059" @default.
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