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- W97745755 abstract "Intermittent eruption of deuterium gas was observed for amorphous and polycrystalline silicon as well as single-crystal silicon during irradiation at room temperature with 20-keV D − ions. As a result, ring-like flat-bottomed craters formed on the implanted surface of single-crystal and amorphous silicon, whereas for polycrystalline silicon, many small pits were observed in a ring. The crater pattern was found to be determined by the local profile of the irradiated beam. When the irradiated single-crystal silicon was annealed at the temperature about 600 °C after bombardment, a number of small pits due to the release of deuterium gas appeared on the irradiated surface. It was found that the pattern of these pits changes drastically with the irradiated doses." @default.
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- W97745755 date "1996-01-01" @default.
- W97745755 modified "2023-09-27" @default.
- W97745755 title "Radiation effects of 20-100 keV deuterium ions in silicon" @default.
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- W97745755 doi "https://doi.org/10.1016/b978-0-444-82334-2.50162-3" @default.
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