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- W97997346 abstract "Abstract: Significant effects of the Ge gate stack formation process on MOS capacitor and MOSFET characteristics are discussed. The GeO desorption is a key to understanding and to establishing the Ge gate stack formation process. High-pressure O 2 oxidation followed by low temperature O 2 annealing, based on thermodynamic considerations in the Ge/GeO 2 system, have dramatically improved Ge/GeO 2 MIS capacitors and MOSFET characteristics. The very low interface states density observed in Ge MOS capacitors, and the very high electron mobility in Ge MOSFETs, are demonstrated." @default.
- W97997346 created "2016-06-24" @default.
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- W97997346 date "2011-01-01" @default.
- W97997346 modified "2023-09-26" @default.
- W97997346 title "High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)" @default.
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- W97997346 doi "https://doi.org/10.1533/9780857091420.4.528" @default.
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